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It is very important to find an effective method of enhancing the solubility of Mn and suppressing the formation of VO in Mn-doped ZnO. X-ray absorption fine structure(XAFS)is very sensitive to the local environment of a selected atom. The result of Zn k-edge X-ray absorption near edge structure(XANES)reveals that the VO density deceases with increasing treatment octylamine content. The variation of Mn k-edge XAFS...

Microelectronic circuits/arrays produced via high-speed printing instead of traditional photolithographic processes offer an appealing approach to creating the long-sought after,low-cost,large-area flexible electronics. Figure 1.Chemical structures of the polymer Tapping-mode atomic force microscopy(AFM)of a thin film of high-molecular weight sample(Mn/Mw=110000/501,000)of the polymer showed large fibrous crystall...

With decreasing dimension, materials exhibit properties which bulk materials do not have. These properties and their related phenomena have attracted more and more attention nowadays. From the 1960s, bismuth (Bi) has drawn great interest for its low carrier concentration, small effective carrier mass and large Fermi wavelength. With the given special properties of bulk Bi, one of the interesting and appealing prob...

Raphene has attracted great interests due to their unique physical and chemical properties,which could be utilized for numerous potential applications. In N-doping processes,it is significant to identify the doping species,which have a great influence on the electronic structure of graphene. The team probed the evolution of the solid state N-doping in graphene utilizing the X-ray absorption near-edge structure(XAN...

A team from the Institute of High Energy Physics has gained in-depth insight into the magnetic behavior and electronic configuration in Mn-doped ZnO nanorods by surface modification. The team successfully tuned the magnetic behavior in Mn-doped ZnO nanorods from paramagnetism to ferromagnetism via surface modification. From the microscopic point of view the surface Mn ions exists in the form of 3+valence and fits ...

GaN material and related LED devices always suffered from the serious strains induced by the heteroepitaxy of III-N semiconductor on the most popular sapphire substrate. GaN material and related LED devices were grown by MOVPE on CPSS. Crystalline and strain in epilayers were analyzed with the equipment atBSRF. Approximation of edge dislocation density shows that the value on CPSSwas reduced to less than 25%(about...
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